The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Aug. 24, 2023
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 29/68 (2006.01); H10P 14/20 (2026.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/403 (2013.01); C30B 29/68 (2013.01); H10P 14/2908 (2026.01); H10P 14/2924 (2026.01); Y10T 428/2495 (2015.01);
Abstract
Provided is an AlN single crystal substrate having a three-layer structure composed of one AlN single crystal as a whole and is classifiable into the first layer, the second layer, and the third layer in this order in the thickness direction in terms of defect density, wherein the second layer has a defect density of 10 times or more the defect density of each of the first layer and the third layer.