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For the Inventor, By the Inventor

Hyogo, Japan

Hideyuki Ozaki

This inventor holds 17 USPTO granted patents. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Denki Kabushiki. Active years: 1984-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideyuki Ozaki. Retrieved from https://idiyas.com/inventor/hideyuki-ozaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 11

Forward Citations = 351(Granted Patents)


Location History:

  • Nishinomiya, JP (1987)
  • Itami, JP (1984 - 1988)
  • Hyogo, JP (1986 - 1998)
  • Hyogo-ken, JP (1999)

Company Filing History:

goldMedal16 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
silverMedal1 out of 26 
 
Mitsubishi Denki Kabushiki
 patents

Years Active: 1984-1999

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17 patents (USPTO):Explore Patents
1. 5875132 - Semiconductor memory device for storing data comprising of plural bits (1999-02-23),
2. 5796287 - Output driver circuit for suppressing noise generation and integrated (1998-08-18),
3. 5757228 - Output driver circuit for suppressing noise generation and integrated (1998-05-26),
4. 5621348 - Output driver circuit for suppressing noise generation and integrated (1997-04-15),
5. 5319589 - Dynamic content addressable memory device and a method of operating (1994-06-07),
6. 4835743 - Semiconductor memory device performing multi-bit Serial operation (1989-05-30),
7. 4833650 - Semiconductor memory device including programmable mode selection (1989-05-23),
8. 4808844 - Semiconductor device (1989-02-28),
9. 4789966 - Semiconductor memory device with page and nibble modes (1988-12-06),
10. 4658379 - Semiconductor memory device with a laser programmable redundancy circuit (1987-04-14),
11. 4641286 - Auxiliary decoder for semiconductor memory device (1987-02-03),
12. 4593382 - MOS dynamic memory device (1986-06-03),
13. 4586167 - Semiconductor memory device (1986-04-29),
14. 4575825 - Semiconductor memory device (1986-03-11),
15. 4551741 - Dram with polysi bit lines and added junction capacitance (1985-11-05),

Title: Innovations of Hideyuki Ozaki

Introduction

Hideyuki Ozaki is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work has been instrumental in advancing the capabilities of semiconductor memory devices.

Latest Patents

One of his latest patents is a semiconductor memory device for storing data comprising of plural bits. This device includes a plurality of input/output terminals (I/O1 to I/O4), memory cell groups, and sense amplifiers. It features decision circuits and selection circuits that work in conjunction with the input/output terminals. A high voltage is applied to the unused input/output terminals, which sets the corresponding sense amplifier groups to a non-activated state.

Another notable patent is an output driver circuit for suppressing noise generation in integrated circuits. This improved circuit receives a type select signal determined by bonding selection. It allows for flexible suppression of noise generation by adjusting the timing of transistors based on the load connected to the output terminal.

Career Highlights

Throughout his career, Hideyuki Ozaki has worked with notable companies, including Mitsubishi Electric Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

He has collaborated with several talented individuals in the field, including Kazuyasu Fujishima and Kazuhiro Shimotori. Their joint efforts have furthered advancements in semiconductor technology.

Conclusion

Hideyuki Ozaki's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovations continue to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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