The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1985
Filed:
Dec. 29, 1983
Applicant:
Inventors:
Kazuhiro Shimotori, Itami, JP;
Hideyuki Ozaki, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 236 ; 357 41 ; 357 59 ;
Abstract
A semiconductor memory device having two layers of polycrystal silicon and having an insulated gate field effect transistor as a fundamental element including by using a first layer of polycrystalline silicon serving as an electrode of a capacitor and a bit line and a second layer of polycrystalline silicon serving as a gate electrode of the transistor.
Shimotori, Kazuhiro. (1985). Dram with polysi bit lines and added junction capacitance (U.S. Patent No. 4551741). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4551741
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile