Ibaraki, Japan

Hideyuki Goto



Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 32(Granted Patents)


Location History:

  • Ibaraki, JP (2006)
  • Tsukuba, JP (2021)

Company Filing History:


Years Active: 2006-2021

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2 patents (USPTO):Explore Patents

Title: Innovations of Hideyuki Goto

Introduction

Hideyuki Goto is a notable inventor based in Ibaraki, Japan. He has made significant contributions to the field of materials science, particularly in the development of innovative dispersions and conductive pastes. With a total of two patents to his name, Goto's work reflects a commitment to advancing technology in practical applications.

Latest Patents

Goto's latest patents include an invention related to inorganic particle dispersion. This dispersion comprises an inorganic powder, hydrophilic fumed silica, and a resin with a hydroxyl group, which enhances its spinnability. Another significant patent is for an electroconductive metal paste and its production method. This invention provides a low-temperature sintering conductive paste suitable for high-density circuit printing. It enables the formation of fine circuits with good adhesive force, a smooth surface, and low resistance when applied to a substrate and baked. The conductive paste utilizes metal fillers and ultrafine metal particles, ensuring uniform dispersion in a heat curable resin composition.

Career Highlights

Throughout his career, Hideyuki Goto has worked with prominent companies such as Harima Chemicals and Ulvac, Inc. His experience in these organizations has allowed him to refine his expertise in materials and processes related to his inventions.

Collaborations

Goto has collaborated with notable colleagues, including Yorishige Matsuba and Yoshihisa Misawa. These partnerships have contributed to the development and enhancement of his innovative projects.

Conclusion

Hideyuki Goto's contributions to the field of materials science through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in technology and materials.

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