Takasaki, Japan

Hidetoshi Seki

This inventor holds 2 USPTO granted patents. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 1992-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidetoshi Seki. Retrieved from https://idiyas.com/inventor/hidetoshi-seki-tbiuc9au

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1992-1995

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2 patents (USPTO):Explore Patents

Title: Hidetoshi Seki: Innovator in Silicon Crystal Growth

Introduction

Hidetoshi Seki is a prominent inventor based in Takasaki, Japan. He has made significant contributions to the field of materials science, particularly in the growth of silicon single crystals. With a total of 2 patents, Seki's work has advanced the understanding and techniques involved in crystal growth processes.

Latest Patents

Seki's latest patents include a method for growing antimony-doped silicon single crystals. This innovative method involves maintaining an oxygen concentration of 12 ppma or more while controlling the pressure of an atmospheric inert gas within the furnace. The process also specifies a reference rate of rotation for the quartz crucible, which is set at 5 rpm or more. This technique allows for the production of high-quality single crystals with uniform oxygen concentration throughout their length. Another notable patent focuses on controlling the specific resistance of single crystals in a Czochralski-method type apparatus. This method utilizes a hermetical chamber and an inert gas supply system to regulate pneumatic pressure and gas supply rates during the crystal pulling process.

Career Highlights

Hidetoshi Seki has dedicated his career to advancing the field of semiconductor materials. His work at Shin-Etsu Handotai Co., Ltd. has positioned him as a key figure in the development of innovative crystal growth techniques. His patents reflect a deep understanding of the complexities involved in producing high-quality silicon crystals.

Collaborations

Seki has collaborated with notable colleagues in his field, including Masahiko Baba and Seiichiro Ohtsuka. These collaborations have further enriched his research and contributed to the advancements in silicon crystal technology.

Conclusion

Hidetoshi Seki's contributions to the field of silicon crystal growth are invaluable. His innovative methods and patents continue to influence the industry and pave the way for future advancements in materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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