The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1995
Filed:
Nov. 14, 1990
Hidetoshi Seki, Takasaki, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method for growing an antimony-doped silicon single crystal having an oxygen concentration of 12 ppma or more is employed wherein the pressure of an atmospheric inert gas within the furnace is set at a range between 10 and 50 millibars (1000-5000 Pa), and also the reference rate of rotation of the quartz crucible is set at 5 rpm or more while pulling an antimony-doped silicon single crystal having an antimony concentration of 6.times.10.sup.18 atom/cc or more from an antimony-doped silicon melt contained in a quartz crucible according to the Czochralski process. The reference rate of rotation can be increased in accordance with the increasing length of the pulled single crystal, and further a pulse-like change in rotation rate can be superimposed over the reference rate of rotation, so that the pulled single crystal can have a high and axially and radially uniform oxygen concentration throughout the entire length of the single crystal.