Hidetoshi Asamura

Title: Hidetoshi Asamura: Innovator in Semiconductor Technology

Introduction

Hidetoshi Asamura is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of single crystal substrates. With a total of 2 patents to his name, Asamura's work has the potential to advance the efficiency and quality of semiconductor devices.

Latest Patents

Asamura's latest patents include a method of manufacturing single crystal 3C-SiC substrate and the single crystal 3C-SiC substrate obtained from this manufacturing method. This innovative method aims to dramatically reduce surface defects that occur during the epitaxial growth process. It ensures high quality for semiconductor devices while simplifying post-processing steps. The process involves two growing stages: the first stage focuses on achieving a surface with high flatness and scattered surface pits, while the second stage aims to fill these surface pits through further epitaxial growth. Additionally, he has developed a method for manufacturing nitrogen compound semiconductor substrates and single crystal SiC substrates, which enhances the crystallinity of the SiC layer.

Career Highlights

Hidetoshi Asamura is currently associated with Air Water Inc., where he continues to innovate in the semiconductor field. His work has garnered attention for its practical applications and potential to improve semiconductor manufacturing processes.

Collaborations

Asamura has collaborated with notable colleagues, including Keisuke Kawamura and Satoshi Obara. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Hidetoshi Asamura's contributions to semiconductor technology through his innovative patents highlight his role as a key inventor in the field. His work not only addresses current challenges in semiconductor manufacturing but also paves the way for future advancements.