The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

Jun. 09, 2009
Applicants:

Keisuke Kawamura, Sakai, JP;

Katsutoshi Izumi, Sakai, JP;

Hidetoshi Asamura, Sakai, JP;

Takashi Yokoyama, Matsumoto, JP;

Inventors:

Keisuke Kawamura, Sakai, JP;

Katsutoshi Izumi, Sakai, JP;

Hidetoshi Asamura, Sakai, JP;

Takashi Yokoyama, Matsumoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substratehaving a surface Si layerof a predetermined thickness and an embedded insulating layeris prepared, and when the Si substrateis heated in a carbon-series gas atmosphere to convert the surface Si layerinto a single crystal SiC layer, the Si layer in the vicinity of an interfacewith the embedded insulating layeris left as a residual Si layer


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