Kawasaki, Japan

Hideo Kurihara

This inventor holds 6 USPTO granted patents. Top assignees: Fujitsu Corporation, Other. Active years: 1999-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideo Kurihara. Retrieved from https://idiyas.com/inventor/hideo-kurihara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 83.3

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 36(Granted Patents)


Location History:

  • Kanagawa, JP (1999 - 2003)
  • Kawasaki, JP (1999 - 2006)

Company Filing History:


Years Active: 1999-2006

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6 patents (USPTO):Explore Patents

Title: Hideo Kurihara: Innovator in Semiconductor Memory Technology

Introduction

Hideo Kurihara is a prominent inventor based in Kawasaki, Japan, known for his significant contributions to the field of semiconductor memory technology. With a total of 6 patents to his name, Kurihara has developed innovative solutions that enhance the stability and reliability of non-volatile semiconductor memory devices.

Latest Patents

Kurihara's latest patents include a non-volatile semiconductor memory and a method of manufacturing the same. This invention focuses on achieving stable and highly reliable operations by forming grooves in a p-type silicon semiconductor substrate, followed by the creation of impurity diffusion layers. A unique three-layer gate insulating film is employed, consisting of a silicon oxide film, a silicon nitride film, and another silicon oxide film. This design allows for effective channel length maintenance even as device sizes are reduced, ensuring excellent stability and reliability.

Another notable patent is the two-bit semiconductor memory with enhanced carrier trapping. This non-volatile memory features a pair of diffused layers on a p-type silicon substrate, with a gate electrode made of polysilicon and tungsten silicide films. The inclusion of a silicon nitride film at both ends of the gate oxide enhances carrier trapping characteristics, preventing carrier injection outside the intended areas. This innovation ensures reliable recording and storage while minimizing write and erase errors.

Career Highlights

Throughout his career, Hideo Kurihara has worked with notable companies, including Fujitsu Corporation. His work has significantly impacted the semiconductor industry, particularly in the development of memory technologies that prioritize reliability and efficiency.

Collaborations

Kurihara has collaborated with esteemed colleagues such as Satoshi Takahashi and Hideki Komori, contributing to advancements in semiconductor technology through teamwork and shared expertise.

Conclusion

Hideo Kurihara's innovative work in semiconductor memory technology has led to the development of patents that enhance the performance and reliability of memory devices. His contributions continue to influence the field, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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