The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Mar. 01, 2002
Hideo Kurihara, Kawasaki, JP;
Mitsuteru Iijima, Kawasaki, JP;
Kiyoshi Itano, Kawasaki, JP;
Tetsuya Chida, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A nonvolatile semiconductor memory comprises a pair of diffused layers formed in the surface area of a p-type silicon substrate, and a gate electrode (polysilicon film and tungsten silicide film formed on a gate oxide between the diffused layers over the p-type silicon substrate. Silicon nitride film is formed at both ends of the gate oxide so that the carrier trap characteristic may become high locally in areas near the pair of diffused layer. This configuration prevents carrier injection to other than the ends of the gate oxide, ensures reliable recording and storage, and increases reliability by preventing write and erase error.