Nonvolatile semiconductor memory device and method of reproducing data

Abstract

There is provided a nonvolatile semiconductor memory device which has a floating gate electrode and writes data by injecting electrons into the floating gate electrode by applying a voltage to a control gate electrode and erases the data by extracting the electrons from the floating gate electrode. The nonvolatile semiconductor memory device which includes a plurality of word lines, a plurality of bit lines intersecting with the plurality of word lines, and a plurality of memory elements each of which is connected to a word line and a bit line at a location where the word line and the bit line are intersected with each other, comprises at least one monitor bit line which intersects with the word lines, and a plurality of monitor elements which are connected to the monitor bit line and the plurality of word lines at locations where the monitor bit line and the plurality of word lines are intersected with each other.