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For the Inventor, By the Inventor

Yokohama, Japan

Hidemi Ishiuchi

USPTO Granted Patents = 5

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 150(Granted Patents)


Location History:

  • Fujisawa, JP (1988 - 1990)
  • Yokohama, JP (2004 - 2006)

Company Filing History:

goldMedal5 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1988-2006

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5 patents (USPTO):Explore Patents
1. 7145215 - Semiconductor device with a cavity therein and a method of manufacturing the same (2006-12-05),
2. 7009273 - Semiconductor device with a cavity therein and a method of manufacturing the same (2006-03-07),
3. 6717251 - Stacked type semiconductor device (2004-04-06),
4. 4975754 - Trench dual-gate MOSFET (1990-12-04),
5. 4731342 - Method of manufacturing a memory cell for a dynamic type random access (1988-03-15),
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