Yokohama, Japan

Hidemi Ishiuchi

This inventor holds 5 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1988-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidemi Ishiuchi. Retrieved from https://idiyas.com/inventor/hidemi-ishiuchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 60.0

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 150(Granted Patents)


Location History:

  • Fujisawa, JP (1988 - 1990)
  • Yokohama, JP (2004 - 2006)

Company Filing History:


Years Active: 1988-2006

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5 patents (USPTO):Explore Patents

Title: The Innovations of Hidemi Ishiuchi

Introduction

Hidemi Ishiuchi is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 5 patents to his name, Ishiuchi's work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is a semiconductor device with a cavity therein and a method of manufacturing the same. This innovative semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

Career Highlights

Hidemi Ishiuchi is currently employed at Kabushiki Kaisha Toshiba, where he continues to develop cutting-edge technologies. His expertise in semiconductor devices has positioned him as a key player in the field.

Collaborations

Ishiuchi has collaborated with talented coworkers, including Kazumi Inoh and Satoshi Matsuda, who have contributed to his innovative projects.

Conclusion

Hidemi Ishiuchi's contributions to semiconductor technology and his innovative patents highlight his importance in the field. His work continues to influence advancements in technology and showcases the potential of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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