Tokyo, Japan

Hideki Nasuno


Average Co-Inventor Count = 2.8

ph-index = 1


Location History:

  • Tokyo, JP (2004 - 2014)
  • Gunma, JP (2018)

Company Filing History:


Years Active: 2004-2018

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3 patents (USPTO):Explore Patents

Title: The Innovations of Hideki Nasuno

Introduction

Hideki Nasuno is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of technology, particularly in the development of advanced exposure apparatuses and electron beam detectors. With a total of 3 patents to his name, Nasuno continues to push the boundaries of innovation.

Latest Patents

Nasuno's latest patents include an exposure apparatus and exposure method designed to form complex and fine patterns. This innovative apparatus minimizes movement errors of a stage that includes a beam generating section, a stage section for sample movement, a detecting section for position detection, a predicting section for drive amount prediction, and an irradiation control section for precise sample irradiation. Another notable patent is for an electron beam detector and processing apparatus. This device features an electron beam scatterer positioned below a shield with multiple openings, along with a beam detection element that converts the electron beam into an electric signal. This design effectively suppresses variations in detection sensitivity based on the position of the openings.

Career Highlights

Hideki Nasuno is currently employed at Adv Antest Corporation, where he applies his expertise in developing cutting-edge technologies. His work has been instrumental in advancing the capabilities of electron beam technology and exposure methods.

Collaborations

Nasuno collaborates with talented individuals such as Akio Yamada and Masahiro Seyama. Their combined efforts contribute to the innovative projects at Adv Antest Corporation.

Conclusion

Hideki Nasuno's contributions to technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in exposure apparatuses and electron beam detection systems.

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