Adv Antest Corporation

Hideki Nasuno

Akio Yamada

Masaki Kurokawa

Masahiro Seyama

Kenji Abe

Akiyoshi Tsuda

Takayuki Sugiura

Complex and fine patterns may be formed by an exposure apparatus that decreases movement error of a stage including a beam generating section that generates a charged particle beam, a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section, a detecting section that detects a position of the stage section, a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section, and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount.

Exposure apparatus and exposure method

There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening.

Electron beam detector, electron beam processing apparatus, and method of manufacturing electron beam detector

An electron beam irradiation apparatus which irradiates an electron beam to an object for easily detecting a defect of a backscattered electron detector, including: an electron beam generating section for generating an electron beam; a plurality of backscattered electron detectors for detecting backscattered electrons generated when the electron beam is irradiated on a mark; a plurality of attenuation sections for attenuating signal values indicating quantity of backscattered electrons detected by the plurality of backscattered electron detectors; and a defect detecting section for detecting a defect of the plurality of backscattered electron detectors based on the signal values attenuated by the plurality of attenuation sections, with attenuation factors for the plurality of attenuation sections being varied.

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Tokyo, Japan

Hideki Nasuno