This inventor holds 1 USPTO granted patent. Top assignee: Anelva Corporation. Active years: 1992.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992
Title: The Innovations of Hideaki Yoshida
Introduction
Hideaki Yoshida is a notable inventor based in Fuchu, Japan. He has made significant contributions to the field of thin film technology, particularly through his innovative patent related to magnetron sputtering apparatus.
Latest Patents
Yoshida holds a patent for a "Magnetron sputtering apparatus and thin film depositing method." This invention enhances the strength of the rotating magnetic field around the center area of a target during sputtering. The design aims to minimize dust particles that could settle on the target area and subsequently affect the quality of thin films deposited on wafers. The method ensures a thin film layer is formed with a distribution within ±5% of the calculated value, significantly improving step coverage for contact holes in individual substrates.
Career Highlights
Yoshida is associated with Anelva Corporation, where he has been instrumental in advancing thin film deposition technologies. His work has contributed to the development of more efficient and reliable sputtering methods, which are crucial in various applications, including semiconductor manufacturing.
Collaborations
Yoshida has collaborated with notable colleagues such as Haruyuki Kochi and Yasuhiko Akao. Their combined expertise has fostered innovation and progress within their field.
Conclusion
Hideaki Yoshida's contributions to magnetron sputtering technology exemplify the impact of innovative thinking in the realm of thin film deposition. His patent reflects a commitment to enhancing manufacturing processes and improving product quality.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile