Magnetron sputtering apparatus and thin film depositing method

Abstract

A magnetron cathode sputtering apparatus for providing an increased strength of the rotating magnetic field around the center area of a target when the sputtering occurs at the target, thereby reducing any dust particles that might settle on the center target area and might travel toward a wafer or each individual substrate thereon to form or deposit a thin film containing defects such as pin holes on the wafer. A magnetron cathode sputtering method uses such apparatus to form or deposit a thin film layer on the wafer, with its distribution within .+-.5% of the calculated value, and provides an improved step coverage for contact holes formed in each individual substrate of the wafer, from which irregularities can be substantially eliminated.