Herwig Hahn

Title: Herwig Hahn: Innovator in GaN Technology

Introduction

Herwig Hahn is a prominent inventor based in Adliswil, Switzerland. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) devices. With a total of 7 patents to his name, Hahn continues to push the boundaries of innovation in this critical area.

Latest Patents

Hahn's latest patents include groundbreaking technologies such as the ultra-thin-body GaN on insulator device. This device features a front-end-of-line processed CMOS platform, which is terminated with an interlayer dielectric material. It also includes a first bonding layer atop the interlayer dielectric material and an ultra-thin-body GaN-based hetero-structure bonded to the CMOS platform. Another notable patent is the electro-optical device with a lateral electron blocking layer. This device comprises a substrate and an active region that includes a stack of semiconductor gain materials. The active region is designed to taper toward the substrate, enhancing its performance.

Career Highlights

Herwig Hahn is currently employed at International Business Machines Corporation (IBM), where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of GaN devices, which are essential for various applications in electronics and optoelectronics.

Collaborations

Hahn has collaborated with notable colleagues such as Charles Caër and Marc Seifried. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Herwig Hahn's contributions to the field of semiconductor technology, particularly through his patents and collaborations, highlight his role as a leading inventor. His work continues to influence the future of GaN devices and their applications in various industries.