The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

May. 05, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Charles Caër, Adliswil, CH;

Herwig Hahn, Adliswil, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/024 (2006.01); H01S 5/02 (2006.01); H01S 3/23 (2006.01); H01S 5/343 (2006.01); H01L 23/34 (2006.01); H01S 5/50 (2006.01); H01S 5/042 (2006.01); H01S 5/125 (2006.01); H01S 5/10 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02476 (2013.01); H01L 23/34 (2013.01); H01S 3/2375 (2013.01); H01S 5/02461 (2013.01); H01S 5/343 (2013.01); H01S 5/50 (2013.01); H01S 5/021 (2013.01); H01S 5/02469 (2013.01); H01S 5/02484 (2013.01); H01S 5/0424 (2013.01); H01S 5/0425 (2013.01); H01S 5/1032 (2013.01); H01S 5/125 (2013.01); H01S 2304/04 (2013.01);
Abstract

An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.


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