Scarborough, ME, United States of America

Henry G Prosack, Jr

This inventor holds 4 USPTO granted patents. Top assignees: National Semiconductor Corporation, Fairchild Semiconductor Corporation. Active years: 2011-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Henry G Prosack, Jr. Retrieved from https://idiyas.com/inventor/henry-g-prosack-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 1


Company Filing History:


Years Active: 2011-2014

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4 patents (USPTO):Explore Patents

Title: The Innovations of Henry G. Prosack, Jr.

Introduction

Henry G. Prosack, Jr. is a notable inventor based in Scarborough, ME (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work has focused on improving the reliability and efficiency of memory devices, showcasing his expertise in the industry.

Latest Patents

One of his latest patents is titled "Structure and method for post oxidation silicon trench bottom shaping." This invention involves a method of fabricating a low-frequency complementary metal oxide semiconductor (LFCC) device. The process includes forming a trench in a substrate and applying an oxide layer that enhances the trench's structural integrity. The design compensates for varying oxidation rates, ensuring a reliable LFCC structure.

Another significant patent is "System and method for improving CMOS compatible non-volatile memory retention reliability." This invention addresses the challenge of charge leakage in memory cells. It features a backend layer made from silicon oxynitride, which is designed to inhibit electron transport and protect CMOS devices from damage caused by plasma. This innovation is crucial for enhancing the performance of non-volatile memory.

Career Highlights

Henry G. Prosack, Jr. has worked with prominent companies in the semiconductor industry, including National Semiconductor Corporation and Fairchild Semiconductor Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in technology.

Collaborations

Throughout his career, Prosack has collaborated with talented individuals such as Heather McCulloh and Jiankang Bu. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Henry G. Prosack, Jr. is a distinguished inventor whose work has significantly impacted the semiconductor industry. His innovative patents and collaborations reflect his dedication to advancing technology and improving device reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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