The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2011

Filed:

Sep. 12, 2005
Applicants:

Heather E. Mcculloh, Kennebunk, ME (US);

Patrick Mccarthy, Hollis, ME (US);

Steven J. Adler, Cape Elizabeth, ME (US);

Henry G. Prosack, Jr., Scarborough, ME (US);

Inventors:

Heather E. McCulloh, Kennebunk, ME (US);

Patrick McCarthy, Hollis, ME (US);

Steven J. Adler, Cape Elizabeth, ME (US);

Henry G. Prosack, Jr., Scarborough, ME (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electronic apparatus is disclosed that comprises a silicon nitride material that has an increased silicon content. The silicon nitride material is manufactured by exposing plasma enhanced chemical vapor deposition (PECVD) silicon nitride to an increased flow of silane while the PECVD silicon nitride is being deposited. The material has anti-reflective coating (ARC) properties and can also be used as a hard mask. When the material is covered with cobalt the material forms conductive cobalt silicide when the cobalt is annealed. A method for siliciding the PECVD silicon nitride is also disclosed.


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