Henri M Rougeot

Title: Innovations of Henri M Rougeot

Introduction

Henri M Rougeot is a notable inventor based in Schenectady, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work primarily focuses on the development of advanced photodiode devices.

Latest Patents

Among his latest patents is a method for the fabrication of deep-diffused avalanche photodiodes. This method involves doping a substantially planar block of n-type semiconductor material with a p-type dopant to create a series of n-type wells. Each well is designed to adjoin a first surface of the block, forming a p-n junction with the surrounding p-type material. The n-type semiconductor maintains a constant concentration of n-type dopant, while the p-type dopant concentration has a positive gradient, ensuring optimal electric field characteristics. Another significant patent is the deep-diffused planar avalanche photodiode, which shares similar methodologies and innovations in semiconductor device fabrication.

Career Highlights

Henri M Rougeot is associated with General Electric Company, where he has applied his expertise in semiconductor technology. His innovative approaches have contributed to advancements in the field, particularly in the design and functionality of photodiodes.

Collaborations

Throughout his career, Henri has collaborated with notable colleagues, including Donald E Castleberry and Dante E Piccone. These collaborations have further enhanced the impact of his inventions in the semiconductor industry.

Conclusion

Henri M Rougeot's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in photodiode technology and semiconductor devices.