General Electric Company

Henri M Rougeot

Donald E Castleberry

Dante E Piccone

Ahmad Nadeem Ishaque

Peter Menditto

George E Possin

Joseph M Pimbley

A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n type wells in the block surrounded by a foundation of p type semiconductor material. Each n type well is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the n type material in the well and the p type material foundation. The n type semiconductor material in each well has a substantially constant concentration of n type dopant throughout the n type material; the concentration of p type dopant in the foundation has a positive gradient extending from the p-n junction towards the second surface such that the peak surface electric field of the p-n junction in each well is less than the bulk electric field of the same p-n junction.

Method for fabrication of deep-diffused avalanche photodiode

Deep-diffused planar avalanche photodiode

A radiation imager comprising an array of scintillator elements optically coupled to a photodetector array comprises a dielectric layer extending around at least the sidewalls of the scintillator elements, and preferably over the surface of the scintillator elements through which the incident radiation enters, and an optically reflective layer disposed over the dielectric layer. The dielectric layer has an optical index that is less than that of the scintillator material, and consequently light collection efficiency of the scintillator is improved as light photons generated in the scintillator reflected back into the scintillator both at the interface of the scintillator and the dielectric layer and at the optically reflective layer. A dome-shaped surface at the end of the scintillator element through which the incident radiation enters and an undulatory-shaped surface at the end of the scintillator which is optically coupled to the photodetectors further increase the light collection efficiency of the scintillator by reducing the number of photons that undergo total internal reflection in the scintillator.

Photodetector scintillator radiation imager having high efficiency light

A large area radiation imager having a scintillator, an amorphous selenium photosensor, and a non-linear high voltage protective device employs a selected biasing voltage between about 100 volts and 1000 volts at the selenium photosensor to cause the photosensor to exhibit avalanche multiplication. The photosensor has an area not less than about 100 square centimeters. The amorphous selenium is doped slightly with arsenic or arsenic and tellurium. The device is advantageously coupled to a data read and reset circuit to selectively read charge generated in pixels of the photosensor. The read and data circuit is protected from an overvoltage condition by the non linear high voltage protective device, such as a protective thin film transistor or a two terminal protective device. The protective TFT is structured to have a relatively thick gate dielectric layer, which thickness is selected to cause the protective TFT to have a threshold voltage corresponding to a desired protective voltage.

Radiation image detector with optical gain selenium photosensors

A radiation imaging device has a plurality of scintillator elements that are each optically coupled to a plurality of internal gain photodetectors. Each photodetector is electrically coupled to a respective detect and hold circuit which amplifies and stores the pulse generated by the photodetector; the stored pulses are sampled via a multiplexed switching arrangement to allow the stored signal from each detect and hold circuit to be processed to produce a digitized imaging signal which corresponds to the energy level of, and location on the array of, the detected incident radiation. The digitized imaging signal is supplied to display memory and analysis equipment for the device.

Growing community of inventors

Schenectady, NY, United States of America

Henri M Rougeot