The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1997
Filed:
May. 15, 1995
Dante Edmond Piccone, Glenmoore, PA (US);
Ahmad Nadeem Ishaque, Clifton Park, NY (US);
Donald Earl Castleberry, Schenectady, NY (US);
Henri Max Rougeot, Schenectady, NY (US);
Peter Menditto, Westerlo, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n type wells in the block surrounded by a foundation of p type semiconductor material. Each n type well is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the n type material in the well and the p type material foundation. The n type semiconductor material in each well has a substantially constant concentration of n type dopant throughout the n type material; the concentration of p type dopant in the foundation has a positive gradient extending from the p-n junction towards the second surface such that the peak surface electric field of the p-n junction in each well is less than the bulk electric field of the same p-n junction.