Heng Wang

Title: Innovations of Heng Wang in Thermoelectric Materials

Introduction

Heng Wang is a prominent inventor based in Pasadena, CA, known for his significant contributions to the field of thermoelectric materials. With a total of 2 patents, his work focuses on enhancing the performance of thermoelectric materials for various applications.

Latest Patents

Heng Wang's latest patents include "Heavily doped PbSe with high thermoelectric performance" and "n-Type doped PbTe and PbSe alloys for thermoelectric applications." The first patent discloses heavily doped PbSe, which exhibits high thermoelectric performance. Thermoelectric property measurements indicate that PbSe is a high zT material suitable for mid-to-high temperature applications. A peak zT greater than 1.3 was observed at 850 K when n was equal to 1.0×10¹⁸ cm^-3. The invention also discusses strategies to improve zT in PbSe, such as alloying, nanostructuring, and band modification. The second patent demonstrates that weak scattering of carriers leads to high mobility, resulting in low electric resistivity and a high Seebeck coefficient for thermoelectric materials. This effect allows for a thermoelectric figure of merit, zT, exceeding 1.3 at high temperatures in n-type PbSe.

Career Highlights

Heng Wang is affiliated with the California Institute of Technology, where he conducts research and development in thermoelectric materials. His innovative work has positioned him as a key figure in advancing thermoelectric technology.

Collaborations

Heng Wang collaborates with notable researchers, including G Jeffrey Snyder and Yanzhong Pei, to further explore and develop thermoelectric materials.

Conclusion

Heng Wang's contributions to thermoelectric materials through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in thermoelectric applications.