The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Oct. 26, 2011
Applicants:
G. Jeffrey Snyder, Pasadena, CA (US);
Heng Wang, Pasadena, CA (US);
Yanzhong Pei, Arcadia, CA (US);
Inventors:
Assignee:
California Institute of Technology, Pasadena, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/16 (2006.01); H01L 35/00 (2006.01); C01B 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 35/16 (2013.01); C01B 19/002 (2013.01); C01P 2002/54 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01);
Abstract
The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT>1.3 was observed when n˜1.0×10cm. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.