The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

May. 03, 2012
Applicants:

G. Jeffrey Snyder, Pasadena, CA (US);

Aaron Lalonde, Pasadena, CA (US);

Yanzhong Pei, Pasadena, CA (US);

Heng Wang, Pasadena, CA (US);

Inventors:

G. Jeffrey Snyder, Pasadena, CA (US);

Aaron LaLonde, Pasadena, CA (US);

Yanzhong Pei, Pasadena, CA (US);

Heng Wang, Pasadena, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/16 (2006.01); H01L 35/34 (2006.01); C01B 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 35/16 (2013.01); H01L 35/34 (2013.01); C01B 19/007 (2013.01); C01P 2002/54 (2013.01); C01P 2006/40 (2013.01);
Abstract

The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTeIwith carrier concentrations ranging from 5.8×10-1.4×10cm.


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