IDiyas

For the Inventor, By the Inventor

Poecking, Germany

Heinz Hoenigschmid

USPTO Granted Patents = 43


Average Co-Inventor Count = 2.2

ph-index = 13

Forward Citations = 637(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (1998)
  • Starngberg, DE (1999)
  • East Fishkill, NY (US) (2002)
  • Starnberg, DE (1999 - 2003)
  • Essex Junction, VT (US) (2002 - 2004)
  • Essex Jct., VT (US) (2004)
  • Fishkill, NY (US) (2002 - 2005)
  • Essex Junction, NY (US) (2003 - 2005)
  • Essex, VT (US) (2005)
  • Pöcking, DE (2008)
  • Poeking, DE (2010)
  • Poecking, DE (2008 - 2023)

Company Filing History:

goldMedal20 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal7 out of 30,028 
 
Siemens Aktiengesellschaft
 patents
bronzeMedal6 out of 164,108 
 
International Business Machines Corporation
 patents
4. 6 out of 555 
 
Qimonda Ag
 patents
5. 4 out of 37,905 
 
Micron Technology Incorporated
 patents
6. 1 out of 244 
 
Infineon Technologies North America Corp.
 patents
7. 1 out of 3 
 
Qimoda Ag
 patents
8. 3 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1998-2025

where 'Filed Patents' based on already Granted Patents

43 patents (USPTO):
1. 12334172 - Link evaluation for a memory device (2025-06-17),
2. 12099746 - Interrupt signaling for a memory device (2024-09-24),
3. 11775378 - Memory health status reporting (2023-10-03),
4. 11615862 - Link evaluation for a memory device (2023-03-28),
5. 8595449 - Memory scheduler for managing maintenance operations in a resistive memory in response to a trigger condition (2013-11-26),
6. 8072792 - Integrated circuit with resistive memory cells and method for manufacturing same (2011-12-06),
7. 8064243 - Method and apparatus for an integrated circuit with programmable memory cells, data system (2011-11-22),
8. 7869253 - Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell (2011-01-11),
9. 7848134 - FB DRAM memory with state memory (2010-12-07),
10. 7656697 - Integrated circuit having a resistively switching memory and method (2010-02-02),
11. 7599209 - Memory circuit including a resistive memory element and method for operating such a memory circuit (2009-10-06),
12. 7522444 - Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device (2009-04-21),
13. 7518902 - Resistive memory device and method for writing to a resistive memory cell in a resistive memory device (2009-04-14),
14. 7447053 - Memory device and method for operating such a memory device (2008-11-04),
15. 7428163 - Method and memory circuit for operating a resistive memory cell (2008-09-23),

Title: The Innovative Journey of Heinz Hoenigschmid

Introduction: Heinz Hoenigschmid is a pioneering inventor hailing from Poecking, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Heinz Hoenigschmid holds several patents in various technological domains, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Heinz Hoenigschmid has been at the forefront of technological advancements, with a focus on developing cutting-edge solutions that have revolutionized industries.

Collaborations: Heinz Hoenigschmid has collaborated with leading research institutions, universities, and innovative companies to further his inventions and bring them to life, solidifying his reputation as a visionary inventor.

Conclusion: Heinz Hoenigschmid's relentless pursuit of innovation and his passion for creating transformative technologies have cemented his legacy as a trailblazing inventor in the world of patents and inventions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…