Enter inventor name

EPO Patents = 1

Average Co-Inventor Count = 2.2

ph-index = 13

Forward Citations = 637(Granted Patents)

Location History:

Wappingers Falls, NY (US) (1998)
Starngberg, DE (1999)
East Fishkill, NY (US) (2002)
Starnberg, DE (1999 - 2003)
Essex Junction, VT (US) (2002 - 2004)
Essex Jct., VT (US) (2004)
Fishkill, NY (US) (2002 - 2005)
Essex Junction, NY (US) (2003 - 2005)
Essex, VT (US) (2005)
Pöcking, DE (2008)
Poeking, DE (2010)
Poecking, DE (2008 - 2023)

Company Filing History:

20 out of 14,724

Infineon Technologies Ag

patents

7 out of 30,045

Siemens Aktiengesellschaft

patents

6 out of 164,197

International Business Machines Corporation

Micron Technology Incorporated

patents

6. 1 out of 244

Infineon Technologies North America Corp.

8. 3 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 1998-2025

Loading Chart...

Areas of Expertise:

Memory Device

Resistive Memory

Integrated Circuit

Magnetoresistive Memory

Dynamic Random Access Memory

Error Detection

Memory Health Reporting

Programmable Memory Cells

Ferroelectric Transistor

Ultra Compact DRAM

Memory Scheduler

Hierarchical Bit Line Architecture

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12334172 - Link evaluation for a memory device (2025-06-17),

2. 12099746 - Interrupt signaling for a memory device (2024-09-24),

3. 11775378 - Memory health status reporting (2023-10-03),

4. 11615862 - Link evaluation for a memory device (2023-03-28),

5. 8595449 - Memory scheduler for managing maintenance operations in a resistive memory in response to a trigger condition (2013-11-26),

6. 8072792 - Integrated circuit with resistive memory cells and method for manufacturing same (2011-12-06),

7. 8064243 - Method and apparatus for an integrated circuit with programmable memory cells, data system (2011-11-22),

8. 7869253 - Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell (2011-01-11),

9. 7848134 - FB DRAM memory with state memory (2010-12-07),

10. 7656697 - Integrated circuit having a resistively switching memory and method (2010-02-02),

11. 7599209 - Memory circuit including a resistive memory element and method for operating such a memory circuit (2009-10-06),

12. 7522444 - Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device (2009-04-21),

13. 7518902 - Resistive memory device and method for writing to a resistive memory cell in a resistive memory device (2009-04-14),

14. 7447053 - Memory device and method for operating such a memory device (2008-11-04),

15. 7428163 - Method and memory circuit for operating a resistive memory cell (2008-09-23),

Title: The Innovative Journey of Heinz Hoenigschmid

Introduction: Heinz Hoenigschmid is a pioneering inventor hailing from Poecking, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Heinz Hoenigschmid holds several patents in various technological domains, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Heinz Hoenigschmid has been at the forefront of technological advancements, with a focus on developing cutting-edge solutions that have revolutionized industries.

Collaborations: Heinz Hoenigschmid has collaborated with leading research institutions, universities, and innovative companies to further his inventions and bring them to life, solidifying his reputation as a visionary inventor.

Conclusion: Heinz Hoenigschmid's relentless pursuit of innovation and his passion for creating transformative technologies have cemented his legacy as a trailblazing inventor in the world of patents and inventions.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com