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For the Inventor, By the Inventor

Dresden, Germany

Heidemarie Schmidt

This inventor holds 12 USPTO granted patents and 5 published patent applications and 8 EPO patents. Top assignees: Helmholtz-Zentrum Dresden-Rossendorf E.v., Techifab Gmbh, Leibniz-Institut Fur Polymerforschung Dresden E.v.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heidemarie Schmidt. Retrieved from https://idiyas.com/inventor/heidemarie-schmidt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 75.0

 

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 19(Granted Patents)


Company Filing History:

goldMedal8 out of 34 
 
Helmholtz-Zentrum Dresden-Rossendorf E.v.
 patents
silverMedal2 out of 2 
 
Techifab Gmbh
 patents
bronzeMedal1 out of 7 
 
Leibniz-Institut Fur Polymerforschung Dresden E.v.
 patents
4. 1 out of 1 
 
Techlfab Gmbh
 patent

Years Active: 2016-2026

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12 patents (USPTO):Explore Patents
1. 12665011 - Memristive structure and memristive device (2026-06-23),
2. 12651633 - Devices and methods for reading a memristive element (2026-06-09),
3. 12640200 - Devices and methods for reading a memristive element (2026-05-26),
4. 12424281 - Devices and methods for operating a memristive element (2025-09-23),
5. 12034424 - Method for the reconfiguration of a vortex density in a rare earth manganate, a non-volatile impedance switch and use thereof (2024-07-09),
6. 11912969 - Transparent specimen slide (2024-02-27),
7. 10388370 - Method and means for operating a complementary analogue reconfigurable memristive resistive switch and use thereof as an artificial synapse (2019-08-20),
8. 10147824 - Detector comprising a variable capacitance diode (2018-12-04),
9. 10088443 - Carrier material for electrically polarizable biomaterials, polyelectrolyte materials, atoms, ions and molecules; its manufacture and use (2018-10-02),
10. 9812640 - Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence (2017-11-07),
11. 9583704 - Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence (2017-02-28),
12. 9520445 - Integrated non-volatile memory elements, design and use (2016-12-13),

Title: Heidemarie Schmidt: Innovator in Memristive Technology

Introduction

Heidemarie Schmidt is a prominent inventor based in Dresden, Germany. She has made significant contributions to the field of memristive technology, holding a total of 12 patents. Her work focuses on advancing the understanding and application of memristive structures and devices.

Latest Patents

Among her latest patents is a memristive structure and memristive device. This invention includes a first electrode, a second electrode, and a memristive element arranged between them. The memristive element is composed of a material with ferroelectric polarization capability, designed to suppress substantial ferroelectric switching in response to voltage drops. Another notable patent involves devices and methods for reading a memristive element. This method includes setting the memristive element into various states and determining static state parameter values associated with those states.

Career Highlights

Heidemarie Schmidt has worked with notable organizations such as Helmholtz-Zentrum Dresden-Rossendorf and Techifab GmbH. Her experience in these institutions has allowed her to develop and refine her innovative ideas in memristive technology.

Collaborations

Heidemarie has collaborated with talented individuals, including Ilona Skorupa and Nan Du. These partnerships have contributed to her success and the advancement of her research.

Conclusion

Heidemarie Schmidt's work in memristive technology showcases her innovative spirit and dedication to advancing the field. Her contributions are paving the way for future developments in this exciting area of research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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