Helmholtz-zentrum Dresden-rossendorf E.v.

Leibniz-institut Fur Polymerforschung Dresden E.v.

Techifab Gmbh

Heidemarie Schmidt

Ilona Skorupa

Nan Du

Danilo Buerger

Agnieszka Bogusz

Tiangui You

Oliver G Schmidt

Christian Mayr

Manfred Helm

Slawomir Prucnal

Xin Ou

Laveen Selvaraj

Stephan Krüger

Shengqiang Zhou

Wenbo Luo

Kefeng Li

Lars Rebohle

Christine Baumgart

Katarzyna Wiesenhütter

Sahitya Varma Vegesna

Martin Müller

Niveditha Manjunath

Yao Shuai

Danilo BÜRGER

Agnieska Bogusz

A device includes a memristive element; and a write circuit to write the memristive element into a memristive state of a plurality of memristive states by a write operation, wherein the memristive state has a characteristic flux and/or a characteristic charge; wherein the characteristic flux corresponds to a characteristic voltage drop over the memristive element applied for a saturation time and wherein the characteristic charge corresponds to a characteristic current through the memristive element applied for a saturation time; wherein the write operation includes: causing a write voltage drop over the memristive element that is greater than the characteristic voltage drop associated with the memristive state or causing a write current through the memristive element that is higher than the characteristic write current associated with the memristive state, each for a total write time that is shorter than the saturation time.

Devices and methods for operating a memristive element

A method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance is disclosed. A unique voltage-time profile is applied between a first and a second electrically conductive contact attached to the rare earth manganate, such that the rare earth manganate passes through an ordering temperature in a region of an electric field forming between the two electrically conductive contacts during a cooling process during and after application of the voltage pulse or the voltage ramp, and the vortex density is thus influenced and adjusted locally in the region of the electric field forming between the two electrically conductive contacts.

Method for the reconfiguration of a vortex density in a rare earth manganate, a non-volatile impedance switch and use thereof

A transparent specimen slide on which the range and the magnitude of the near-surface electrostatic forces can be influenced and set during a process of producing the specimen slide. The specimen slide has a surface on the supporting side and a surface facing away from the supporting side and at least three layers: an electrically insulating first layer, a silicon-containing second layer arranged on the first layer, and an electrically insulating third layer arranged on the second layer. An interface is formed between the first and second layers and between the second and third layers with a first surface charge density. The interface between the second and third layers has a second surface charge density. The first and second surface charge densities have the same or different signs.

Transparent specimen slide

An electronic memristive device that has a complementary analog reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with reading pulses of adapted polarity, the device can implement fuzzy logic and be operated as an artificial synapse with the realization of all four learning curves for complementary learning. A plurality of options for the use of the device are proposed.

Method and means for operating a complementary analogue reconfigurable memristive resistive switch and use thereof as an artificial synapse

A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.

Detector comprising a variable capacitance diode

Carriers for biomaterials, for polyelectrolyte materials, for electrically polarizable atoms, ions, molecules are provided wherein the material of the carriers is compatible with materials that are used in microelectronics. The arrangement of the biomaterials or biomolecules and optionally of biomolecules, biomaterials, biological functional units or cells adsorbed thereon can be affected with the carrier in a specific manner. Complex molecular machines can be built and tested by the carriers.

Carrier material for electrically polarizable biomaterials, polyelectrolyte materials, atoms, ions and molecules; its manufacture and use

Disclosed is a complementary resistor switch () comprising two outer contacts, between which two piezo- or ferroelectric layers (and) having an inner common contact are situated. At least one region (&#x2033;) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence

Disclosed is a complementary resistor switch () comprising two outer contacts, between which two piezo- or ferroelectric layers (and) having an inner common contact are situated. At least one region (&#x2033;) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (O), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.

Integrated non-volatile memory elements, design and use

Growing community of inventors

Dresden, Germany

Heidemarie Schmidt