The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Apr. 03, 2017
Applicant:

Helmholtz-zentrum Dresden—rossendorf E.v., Dresden, DE;

Inventors:

Heidemarie Schmidt, Dresden, DE;

Kefeng Li, Chemnitz, DE;

Ilona Skorupa, Dresden, DE;

Nan Du, Chemnitz, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06N 3/04 (2006.01); G06N 3/063 (2006.01); H03K 19/20 (2006.01); G11C 11/54 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0007 (2013.01); G06N 3/0436 (2013.01); G06N 3/0635 (2013.01); G11C 11/54 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/147 (2013.01); H03K 19/20 (2013.01); G11C 2013/0052 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0083 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/15 (2013.01); G11C 2213/31 (2013.01);
Abstract

An electronic memristive device that has a complementary analog reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with reading pulses of adapted polarity, the device can implement fuzzy logic and be operated as an artificial synapse with the realization of all four learning curves for complementary learning. A plurality of options for the use of the device are proposed.


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