Hayato Konno

Title: Hayato Konno: Innovator in Semiconductor Technology

Introduction

Hayato Konno is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative spirit and technical expertise.

Latest Patents

One of his latest patents is a semiconductor memory device. This device includes a plurality of word lines, a first select gate line, a second select gate line, a first semiconductor layer, a third select gate line, a fourth select gate line, a second semiconductor layer, and a word line contact electrode. The design ensures that the first select gate line and the third select gate line are positioned farther from the substrate than the plurality of word lines, while the second select gate line and the fourth select gate line are closer to the substrate. This configuration enhances the performance of the memory device.

Another notable patent is for a memory device and memory system. This invention comprises a plurality of memory cell transistors, a first word line, a controller, and a storage circuit. Each memory cell transistor is capable of storing multiple pieces of bit data. The controller executes a loop process that includes a program operation and verification operations, ensuring efficient data management and storage.

Career Highlights

Hayato Konno is currently employed at Kioxia Corporation, a leading company in the semiconductor industry. His work at Kioxia has allowed him to focus on advancing memory technology, contributing to the company's reputation for innovation and quality.

Collaborations

He collaborates with talented coworkers such as Hiroyuki Ishii and Yuji Nagai. Their combined expertise fosters a creative environment that drives technological advancements in their field.

Conclusion

Hayato Konno's contributions to semiconductor technology through his patents and work at Kioxia Corporation highlight his role as an influential inventor. His innovative designs continue to shape the future of memory devices and systems.