Company Filing History:
Years Active: 2004-2006
Title: Discovering the Innovations of Haur-Ywh Chen
Introduction
Haur-Ywh Chen is a renowned inventor based in Kaohsiung, Taiwan. With an impressive portfolio that includes three patents, Chen has made significant contributions to the field of semiconductor technology. His innovative methodologies serve as a benchmark in the design and fabrication of advanced electronic devices, particularly in the development of FINFET and MOSFET structures.
Latest Patents
Haur-Ywh Chen holds notable patents that highlight his expertise in semiconductor fabrication techniques. One of his latest patents is the "Method of fabricating a necked FINFET device." This innovative method involves creating a double gate FINFET device structure within a silicon-on-insulator (SOI) layer. The unique feature of this design is the narrowed channel region, which is defined by composite insulator spacers and enhances device performance.
In addition, Chen has developed a "Method of fabricating a MOSFET device with metal containing gate structures." This method introduces a composite gate structure for both planar MOSFET devices and vertical FINFET devices, utilizing a combination of silicon and titanium nitride components. This approach allows for lower operating voltages and improved performance compared to traditional polysilicon gate structures.
Career Highlights
Haur-Ywh Chen works for Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His innovative work has not only earned him patents but also recognition among peers and industry professionals. Through his inventions, Chen has contributed to the advancement of electronic components and devices essential in today's technology-driven world.
Collaborations
Throughout his career, Chen has collaborated with various talented individuals, including colleagues Fang-Cheng Chen and Yi-Ling Chan. These partnerships have fostered a creative environment, leading to groundbreaking innovations in semiconductor fabrication techniques and device structures.
Conclusion
Haur-Ywh Chen stands out as a significant figure in the field of semiconductor innovation. His patents, particularly in the areas of FINFET and MOSFET technologies, showcase his commitment to enhancing electronic device performance. As technology continues to evolve, Chen's contributions will undoubtedly leave a lasting impact on the industry.