The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Dec. 13, 2002
Hsien-kuang Chiu, Hsinchu, TW;
Fang-cheng Chen, Hsin-chu, TW;
Haur-ywh Chen, Kaohsiung, TW;
Hun-jan Tao, Hsinchu, TW;
Yuan-hung Chiu, Taipei, TW;
Hsien-Kuang Chiu, Hsinchu, TW;
Fang-Cheng Chen, Hsin-chu, TW;
Haur-Ywh Chen, Kaohsiung, TW;
Hun-Jan Tao, Hsinchu, TW;
Yuan-Hung Chiu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a composite gate structure for a planar MOSFET device, as well as for vertical, double gate, FINFET device, has been developed. The method features a composite gate structure comprised of an overlying silicon gate structure shape, and an underlying titanium nitride gate structure shape. The titanium nitride component allows a lower work function, and thus lower device operating voltages to be realized when compared to counterpart gate structures formed with only polysilicon. A novel, two step gate structure definition procedure, featuring an anisotropic first etch procedure for definition of the polysilicon gate structure shape, followed by a wet or dry isotopic second etch procedure for definition of the titanium nitride gate structure shape, is employed.