Kyoto, Japan

Haruhiko Nishikage

USPTO Granted Patents = 3 

Average Co-Inventor Count = 2.6

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2012-2016

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3 patents (USPTO):Explore Patents

Title: Haruhiko Nishikage: Innovator in Semiconductor Technology

Introduction

Haruhiko Nishikage is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to pressure sensors and semiconductor devices.

Latest Patents

One of his latest patents is a pressure sensor and method for manufacturing a pressure sensor. This invention comprises a semiconductor substrate, insulating layers formed on the substrate, and a semiconductor layer with a cavity portion provided between them. The design allows for easy and precise manufacturing of the pressure sensor. Another notable patent is for a semiconductor device and method of fabricating the semiconductor device. This invention addresses limitations in the sensitivity of HEMS devices by incorporating a unique structure that includes a recess portion, movable and fixed electrodes, and isolation regions to ensure electrical separation.

Career Highlights

Haruhiko Nishikage has built a successful career at Rohm Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also pushed the boundaries of what is possible in the field.

Collaborations

He has collaborated with notable coworkers such as Toma Fujita and Hironobu Kawauchi, further enhancing the innovative environment at Rohm Co., Ltd.

Conclusion

Haruhiko Nishikage's contributions to semiconductor technology through his patents reflect his dedication to innovation and excellence. His work continues to influence the industry and inspire future advancements.

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