Rohm Co., Ltd.

Haruhiko Nishikage

Toma Fujita

Hironobu Kawauchi

A pressure sensorcomprises a semiconductor substrate, insulating layersformed on the semiconductor substrate, a semiconductor layerformed on the semiconductor substratewith the insulating layersintervening therebetween, and a cavity portionprovided between the semiconductor substrateand the semiconductor layer. The portion of the semiconductor layerwhich overlaps the cavity portionas viewed in a lamination direction serves as a movable portion. The cavity portionis surrounded by the insulating layers. With this arrangement, the pressure sensorcan be manufactured easily with high precision.

Pressure sensor and method for manufacturing pressure sensor

To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same. The semiconductor device includes: a semiconductor substrate with a recess portion formed in an upper surface; a supporting body provided around the recess portion on the semiconductor substrate; a beam-type movable portion which includes a movable electrode provided above the recess portion and is fixed to the supporting body at a position away from the movable electrode; a beam-type fixed electrode provided above the recess portion to be opposed to the movable electrode and fixed to the supporting body; and isolation regions each including a separation column made of a semiconductor and a separation insulating film provided on a side surface of the separation column, the isolation regions being provided between the movable electrode and the supporting body and between the fixed electrode and the supporting body to electrically separate the movable and fixed electrodes from the supporting body.

Semiconductor device and method of fabricating the semiconductor device

There are disclosed a semiconductor device in which a short circuit between an oscillator and a semiconductor substrate is prevented, the semiconductor device being capable of suppressing an increase of fabrication steps, and a method of fabricating the semiconductor device. The semiconductor device includes: a semiconductor substrate, in which a recessed portion is formed on an upper surface, and a semiconductor layer is exposed to a bottom surface of the recessed portion; an oscillator that has a beam-type movable electrode arranged in the recessed portion, the movable electrode having insulating films arranged on side surfaces and lower surface thereof, and is fixed to the semiconductor substrate at a position apart from the movable electrode; and a beam-type fixed electrode that is arranged in the recessed portion so as to be opposed to the movable electrode, and is fixed to the semiconductor substrate so as to be electrically isolated from the movable electrode.

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Kyoto, Japan

Haruhiko Nishikage