Milpitas, CA, United States of America

Harsh Shrivastav

This inventor holds 1 USPTO granted patent. Top assignee: Ansys, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harsh Shrivastav. Retrieved from https://idiyas.com/inventor/harsh-shrivastav

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Harsh Shrivastav: Inventor in Electromagnetic Fault-Injection Simulation

Introduction

Harsh Shrivastav is an inventor based in Milpitas, California, and works at Ansys, Inc. His patent work addresses simulation methods for evaluating electromagnetic fault-injection vulnerabilities in circuits.

Latest Patents

Shrivastav is associated with 1 patent, titled “Simulation Based Analysis of Electromagnetic Fault Injection.” The disclosure describes simulation systems and methods that model electromagnetic fault injection from a simulated probe into a simulated circuit. One method applies a simulated electromagnetic source near the circuit’s surface, calculates the resulting induced voltages, and uses those voltages to identify potential fault vulnerabilities. This approach can help evaluate and rank a circuit’s susceptibility to electromagnetic fault injection.

Career Highlights

Shrivastav’s patent reflects the use of simulation to analyze circuit security and assess potential vulnerabilities. His work at Ansys, Inc. is connected to the patent’s focus on modeling electromagnetic effects in electronic systems.

Collaborations

The provided information identifies Deqi Zhu and Lang Lin as Shrivastav’s coworkers. The patent disclosure concerns simulation-based analysis of electromagnetic fault injection.

Conclusion

Harsh Shrivastav’s patent describes a simulation-based approach for identifying and ranking circuit vulnerabilities to electromagnetic fault injection.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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