San Ramon, CA, United States of America

Harry Muljono

This inventor holds 52 USPTO granted patents and 5 published patent applications and 2 EPO patents, primarily in Electrostatic Discharge Protection (CPC class H03K). Top assignees: Intel Corporation, Intel Products IP LLC. Active years: 1998-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harry Muljono. Retrieved from https://idiyas.com/inventor/harry-muljono

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 52 

% Patents Active = 61.5

 

Average Co-Inventor Count = 2.1

ph-index = 11

Forward Citations = 458(Granted Patents)

Forward Citations (Not Self Cited) = 436(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (1998)
  • Union City, CA (US) (2000 - 2021)
  • San Ramon, CA (US) (2009 - 2022)

Company Filing History:


Years Active: 1998-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Electrostatic Discharge
Signal Modulation
Crosstalk Compensation
Driver Assistance
High Speed I/O
Voltage Regulation
Transmitter Control
Edge Rate Compensation
Capacitance Testing
Differential Link
Slew Rate Control
Timing Measurements
52 patents (USPTO):Explore Patents

Title: Innovations of Harry Muljono in Electrostatic Discharge Protection

Introduction

Harry Muljono, based in San Ramon, California, is an accomplished inventor with a remarkable portfolio of 51 patents. His work primarily focuses on enhancements in electronic hardware, particularly in the area of electrostatic discharge (ESD) protection.

Latest Patents

Among his latest innovations are inventions related to driver-assisted ESD protection apparatuses and methods. One of his notable patents details an Analog Front End (AFE) driver or transmitter designed for ESD protection of an input-output (IO) pin. This invention effectively reduces the ESD diode count and minimizes pad capacitance, which is critical for achieving high performance in IO circuits such as double data rate (DDR) IO and PCI Express. The architecture employs a channel of active devices integrated within the AFE driver that connects the IO pad to ground to discharge ESD current, thereby providing an alternative pathway for the current and lowering the reliance on ESD diodes.

Another significant patent involves on-die circuitry designed for ESD analysis. In this invention, an ESD protection circuit is linked to a node, which is complemented by three circuits that manage charge pumps to modify voltage levels based on clock signal periods. These enhancements not only bolster ESD protection but also contribute to the generation of additional voltages necessary for advanced circuit functionalities.

Career Highlights

Harry Muljono currently holds a key position at Intel Corporation, a leading company in technology and semiconductor manufacturing. His expertise in electrical engineering and innovative approaches has led to numerous advancements in ESD protection technology, positioning him as a significant contributor in his field.

Collaborations

Throughout his career, Muljono has collaborated with talented professionals, including colleagues Stefan Rusu and Linda K. Sun. These collaborations have fostered an environment of innovation, enabling the development of groundbreaking technologies that enhance electronic device performance.

Conclusion

Harry Muljono stands out as a pioneering inventor in the realm of electrostatic discharge protection, with a commendable portfolio of patents that have significantly impacted the industry. His ongoing work at Intel Corporation continues to shape the future of electronics, demonstrating the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…