Company Filing History:
Years Active: 2002-2008
Title: The Innovative Contributions of Harry Liu
Introduction
Harry Liu is a prominent inventor based in Plymouth, MN (US), known for his significant contributions to technology through his innovative patents. With a total of 15 patents to his name, Liu has made remarkable advancements in the fields of memory technology and magneto-resistive structures.
Latest Patents
Among his latest patents is the "Passivated magneto-resistive bit structure and passivation method therefor." This invention focuses on protecting surfaces that are susceptible to oxidation or corrosion. In one embodiment, a bit structure is encapsulated using an etch stop barrier material, while in another, the top of the bit structure is protected by the same material, with dielectric spacers safeguarding the side walls. Another notable patent is the "Radiation-hardened SRAM cell with write error protection." This invention presents a method and system designed to prevent write errors in a Single Event Upset (SEU) hardened static random access memory (SRAM) cell. It incorporates a compensating element connected to the feedback path of the SRAM cell, which effectively cancels out capacitive coupling generated in an active delay element. This innovative solution occupies a smaller silicon area compared to other proposed methods.
Career Highlights
Harry Liu has worked with leading companies in the technology sector, including Micron Technology Incorporated and Honeywell International Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in memory technology and related fields.
Collaborations
Throughout his career, Liu has collaborated with notable colleagues such as Shaoping Li and Theodore Zhu. These partnerships have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.
Conclusion
Harry Liu's contributions to technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in memory technology and magneto-resistive structures, showcasing the importance of innovation in driving progress.