The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jul. 07, 2003
Shaoping LI, Naperville, IL (US);
Theodore Zhu, Maple Grove, MN (US);
Anthony S. Arrott, Washington, DC (US);
Harry Liu, Plymouth, MN (US);
William L. Larson, Eden Prairie, MN (US);
Yong LU, Plymouth, MN (US);
Shaoping Li, Naperville, IL (US);
Theodore Zhu, Maple Grove, MN (US);
Anthony S. Arrott, Washington, DC (US);
Harry Liu, Plymouth, MN (US);
William L. Larson, Eden Prairie, MN (US);
Yong Lu, Plymouth, MN (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.