Singapore, Singapore

Hao Zhang


Average Co-Inventor Count = 6.5

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2010-2014

where 'Filed Patents' based on already Granted Patents

2 patents (USPTO):

Title: The Innovative Contributions of Hao Zhang

Introduction

Hao Zhang is a prominent inventor based in Singapore, known for his significant contributions to semiconductor technology. With a total of 2 patents, he has made strides in enhancing device reliability and performance in the field of electronics.

Latest Patents

Hao Zhang's latest patents include a high-K metal gate device and a method for the formation of a metal silicide layer over copper interconnects. The high-K metal gate device features a substrate with a device region surrounded by an isolation region. This device includes edge portions along the width of the device region and a central portion, with a gate layer that has a graded thickness. The second patent focuses on a fabrication method for a sputtered metal silicide layer over a copper interconnect, which enhances reliability through a low-temperature sputtering process.

Career Highlights

Throughout his career, Hao Zhang has worked with notable companies such as Chartered Semiconductor Manufacturing Ltd and Globalfoundries Singapore Pte. Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor manufacturing.

Collaborations

Hao Zhang has collaborated with esteemed colleagues, including Yeow Kheng Lim and Wei Lu, contributing to various projects that push the boundaries of technology.

Conclusion

Hao Zhang's work exemplifies the spirit of innovation in the semiconductor industry. His patents and collaborations reflect a commitment to advancing technology and improving device performance.

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