International Business Machines Corporation

Chartered Semiconductor Manufacturing Ltd (corporation)

Globalfoundiers Singapore Pte. Ltd.

Hao Zhang

Liang Choo Hsia

Wei Lu

Michael Vincent Aquilino

Chim Seng Seet

Yeow Kheng Lim

Young Way Teh

Yun Ling Tan

Deleep R Nair

Arifuzzaman (Arif) Sheikh

Jyoti Gupta

Jinghong H (John) Li

A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness Tthat is different from a thickness Tat the central portion of the device region.

High-K metal gate device

A method of fabrication of a sputtered metal silicide layer over a copper interconnect. We form a dielectric layer over a conductive layer. We form an interconnect opening in the dielectric layer. We form a copper layer at least filling the interconnect opening. We planarize the copper layer to form a copper interconnect in the interconnect opening. The copper interconnect is over polished to form a depression. We form metal silicide layer over the copper interconnect using a low temperature sputtering process. We can form a cap layer over the metal silicide layer.

Formation of metal silicide layer over copper interconnect for reliability enhancement

Growing community of inventors

Singapore, Singapore

Hao Zhang