The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Nov. 12, 2005
Yeow Kheng Lim, Singapore, SG;
Wei LU, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Jyoti Gupta, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Hao Zhang, Singapore, SG;
Yeow Kheng Lim, Singapore, SG;
Wei Lu, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Jyoti Gupta, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Hao Zhang, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
A method of fabrication of a sputtered metal silicide layer over a copper interconnect. We form a dielectric layer over a conductive layer. We form an interconnect opening in the dielectric layer. We form a copper layer at least filling the interconnect opening. We planarize the copper layer to form a copper interconnect in the interconnect opening. The copper interconnect is over polished to form a depression. We form metal silicide layer over the copper interconnect using a low temperature sputtering process. We can form a cap layer over the metal silicide layer.