Tainan, Taiwan

Hao Ping Yan

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: United Microelectronics Corp.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hao Ping Yan. Retrieved from https://idiyas.com/inventor/hao-ping-yan-6t5jopql

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Hao Ping Yan in Semiconductor Technology.

Introduction: Hao Ping Yan is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing semiconductor structures, which are crucial for modern electronic devices.

Latest Patents: Hao Ping Yan holds 1 patent for a semiconductor structure. This innovative design includes a substrate and protection structures. The substrate features a die region that encompasses corner regions. The protection structures are strategically located in these corner regions. Each protection structure is characterized by a square top-view pattern, with varying sizes among those located in the same corner region.

Career Highlights: Hao Ping Yan is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His role involves research and development, where he applies his expertise to advance semiconductor technologies.

Collaborations: Some of his notable coworkers include Chin-Chia Kuo and Wei Hsuan Chang. Their collaborative efforts contribute to the innovative projects at United Microelectronics Corporation.

Conclusion: Hao Ping Yan's work in semiconductor structures exemplifies the importance of innovation in technology. His contributions are vital for the ongoing advancements in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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