Company Filing History:
Years Active: 2019-2020
Title: **Hao-Hsiang Yang: Pioneering Innovations in Semiconductor Fabrication**
Introduction
Hao-Hsiang Yang, an accomplished inventor based in Taoyuan, Taiwan, is recognized for his contributions to the semiconductor industry with two patents to his name. His work focuses on advanced fabrication techniques that enhance the performance and efficiency of electronic components, especially in FinFET technology.
Latest Patents
Yang's latest patents include innovative methods for fabricating fin structures with tensile stress. His patent, titled “Fabricating method of fin structure with tensile stress and complementary FinFET structure,” outlines a sophisticated process that begins by dividing a substrate into separate N-type and P-type transistor regions. This method features the formation of first and second trenches that define the fin structure and segment it accordingly. A critical step involves using flowable chemical vapor deposition to create a silicon oxide layer that fills these trenches. Subsequently, a patterned mask is applied specifically within the N-type region to ensure precise treatment of the silicon oxide layer, culminating in a finely tuned fin structure that greatly benefits transistor performance.
Career Highlights
Hao-Hsiang Yang has established a commendable career at United Microelectronics Corporation (UMC), where he continues to push the boundaries of semiconductor manufacturing. His innovative approaches have not only secured him patents but have also contributed to the advancement of industry standards in chip design and fabrication. Yang's expertise plays a vital role in the company's commitment to providing cutting-edge technology solutions.
Collaborations
Throughout his career, Yang has collaborated with notable colleagues, including Kai-Lin Lee and Zhi-Cheng Lee. Together, they have worked on several projects aimed at improving the efficiency of semiconductor devices, sharing insights and expertise to further innovate within their field.
Conclusion
Hao-Hsiang Yang's contributions to the semiconductor industry are significant and impactful. With a focus on the fabrication of fin structures, Yang continues to innovate and refine techniques that will shape the future of electronics. As the industry evolves, his work at United Microelectronics Corporation highlights the critical intersection of research, collaboration, and practical application in advancing technology.