United Microelectronics Corp.

Hao-Hsiang Yang

Zhi-Cheng Lee

Wei-Jen Chen

Kai-Lin Lee

Chi-Hsiao Chen

Chuang-Han Hsieh

Ting-Hsuan Kang

An-Shih Shih

Ren-Yu He

Hung-Wen Huang

A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Fabricating method of fin structure with tensile stress and complementary FinFET structure

Growing community of inventors

Taoyuan, Taiwan

Hao-Hsiang Yang