Hany M Fahmy is a notable inventor based in Sacramento, California. With a commendable portfolio of six patents, he has made significant contributions to the field of semiconductor technologies, particularly in enhancing memory systems.

Latest Patents

Among his latest innovations are two groundbreaking patents:

1. **Method and apparatus to calibrate DRAM on resistance (Ron) and on-die termination (ODT) values over process, voltage and temperature (PVT) variations** - This invention involves a memory system comprised of a memory array, a resistor that connects to a reference voltage, and on-die termination circuitry. It allows for calibration commands that enhance the precision of memory operations across varying conditions.

2. **Polarity driven dynamic on-die termination** - This patent addresses systems and methods for polarity-driven on-die termination. It includes an integrated circuit with I/O capabilities, enabling multiplexing of ODT signals for more efficient signal processing.

Career Highlights

Hany M Fahmy currently contributes his expertise to Intel Corporation, where he works on advancing innovative memory solutions. His work in this reputed company signifies his commitment to pushing the boundaries of technology and improving electronic performance.

Collaborations

Throughout his career, Hany has collaborated with notable colleagues, including George Vergis and Christopher E Cox. These partnerships exemplify the spirit of teamwork in the innovation sector, leading to shared advancements in semiconductor technology.

Conclusion

Hany M Fahmy is an influential figure in the world of inventions, significantly impacting memory calibration and termination strategies through his patents. His commitment to innovation and collaboration continues to inspire future advancements in the field.

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