Wuhan, China

Hanxiao Li

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hanxiao Li. Retrieved from https://idiyas.com/inventor/hanxiao-li-x9013xb3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Hanxiao Li in Semiconductor Technology

Introduction

Hanxiao Li is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances memory cell functionality.

Latest Patents

Hanxiao Li holds a patent for a semiconductor device and its fabrication method. This device includes a memory cell wafer that features a dielectric layer, a conductor layer, and through contacts that penetrate both layers. The design incorporates an isolator that surrounds a specific region of the conductor layer, ensuring isolation from other portions. This innovative structure allows for improved performance and reliability in semiconductor applications.

Career Highlights

Li's career is marked by his dedication to advancing semiconductor technology. His work at Yangtze Memory Technologies, Ltd. has positioned him as a key player in the industry. His patent reflects his commitment to innovation and excellence in the field.

Collaborations

Hanxiao Li has collaborated with notable colleagues, including Jinxing Chen and Guanglong Fan. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Hanxiao Li's contributions to semiconductor technology exemplify the spirit of innovation. His patent showcases his expertise and commitment to enhancing memory cell functionality. Through his work, he continues to influence the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…