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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12580019 B1

PDFFull Text
Date of Patent:
Mar. 17, 2026

Filed:

Dec. 28, 2022

Semiconductor device and fabrication method thereof

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Hanxiao Li, Wuhan, CN;

Jinxing Chen, Wuhan, CN;

Guanglong Fan, Wuhan, CN;

Yanli Wang, Wuhan, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Attorney:

Anova Law Group, PLLC

Primary Examiner:

Ermias T Woldegeorgis

Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 23/522 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); H01L 23/5226 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor device includes a memory cell wafer. The memory cell wafer includes a dielectric layer, a conductor layer over the dielectric layer, one or more through contacts penetrating through the dielectric layer and the conductor layer, and an isolator surrounding a region of the conductor layer and at least one of the one or more through contacts in a horizontal direction and extending vertically through the conductor layer to be connected to the dielectric layer. The region of the conductor layer surrounded by the isolator is isolated from other portions of the conductor layer. Each of the one or more through contacts includes a column part in the dielectric layer and a pad part in the conductor layer.

Find Patent Forward Citations

Li, Hanxiao. (2026). Semiconductor device and fabrication method thereof (U.S. Patent No. 12580019). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12580019

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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