Company Filing History:
Years Active: 2022-2024
Title: Hanwei Yi - Innovator in Three-Dimensional Memory Devices
Introduction
Hanwei Yi is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of three-dimensional memory devices. With a total of 2 patents, his work focuses on innovative methods for forming channel structures in advanced memory technologies.
Latest Patents
Hanwei Yi's latest patents include two notable inventions. The first patent, titled "Methods for forming channel structures with protective structure in three-dimensional memory devices," discloses a process where a memory film and a sacrificial layer are formed along the sidewall and bottom of a channel hole. A protective structure is created to cover a portion of the sacrificial layer, allowing for selective wet etching of the sacrificial layer and memory film. The second patent, "Methods for forming channel structures with reduced sidewall damage in three-dimensional memory devices," outlines a similar process but emphasizes the selective removal of the sacrificial layer to minimize sidewall damage during fabrication.
Career Highlights
Hanwei Yi is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has positioned him as a key player in the development of cutting-edge memory solutions. His innovative approaches have garnered attention in the industry, contributing to advancements in memory device technology.
Collaborations
Hanwei Yi collaborates with talented individuals such as Xiaofen Zheng and Hongbin Zhu. Their combined expertise enhances the research and development efforts at Yangtze Memory Technologies Co., Ltd.
Conclusion
Hanwei Yi's contributions to the field of three-dimensional memory devices demonstrate his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving memory device fabrication processes, making him a notable figure in the industry.