logo

For the Inventor, By the Inventor

Munich, Germany

Hans-Peter Felsl

This inventor holds 9 USPTO granted patents. Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag. Active years: 2010-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans-Peter Felsl. Retrieved from https://idiyas.com/inventor/hans-peter-felsl-ersfe55f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9

% Patents Active = 66.7

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 20(Granted Patents)


Location History:

  • München, DE (2010)
  • Munich, DE (2010 - 2017)

Company Filing History:

goldMedal7 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal2 out of 2,211 
 
Infineon Technologies Austria Ag
 patents

Years Active: 2010-2017

Loading Chart...
9 patents (USPTO):Explore Patents
1. 9741795 - IGBT having at least one first type transistor cell and reduced feedback capacitance (2017-08-22),
2. 9412854 - IGBT module and a circuit (2016-08-09),
3. 9166027 - IGBT with reduced feedback capacitance (2015-10-20),
4. 9105682 - Semiconductor component with improved dynamic behavior (2015-08-11),
5. 8860025 - Semiconductor device and method for manufacturing the semiconductor device (2014-10-14),
6. 8829562 - Semiconductor device including a dielectric structure in a trench (2014-09-09),
7. 7915675 - IGBT having one or more stacked zones formed within a second layer of the IGBT (2011-03-29),
8. 7812427 - Soft switching semiconductor component with high robustness and low switching losses (2010-10-12),
9. 7687891 - Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type (2010-03-30),

Title: The Innovations of Hans-Peter Felsl

Introduction

Hans-Peter Felsl is a notable inventor based in Munich, Germany. He has made significant contributions to the field of power electronics, particularly through his innovative work on Insulated Gate Bipolar Transistors (IGBTs). With a total of 9 patents to his name, Felsl has established himself as a key figure in the industry.

Latest Patents

Felsl's latest patents include groundbreaking technologies in IGBT design. One of his notable inventions is an IGBT that features at least one first type transistor cell with reduced feedback capacitance. This design includes a base region, first and second emitter regions, and a body region arranged between the first emitter region and the base region. The configuration allows for improved performance by optimizing the doping concentration in the base region. Another significant patent is for an IGBT module that incorporates multiple individual IGBTs with varying softness during switching-off, enhancing the efficiency of electronic power devices.

Career Highlights

Throughout his career, Hans-Peter Felsl has worked with prominent companies in the semiconductor industry, including Infineon Technologies AG and Infineon Technologies Austria AG. His work has been instrumental in advancing the capabilities of power electronics, making him a respected inventor in his field.

Collaborations

Felsl has collaborated with several notable professionals, including Hans-Joachim Schulze and Franz-Josef Niedernostheide. These collaborations have contributed to the development of innovative technologies and have furthered advancements in power electronics.

Conclusion

Hans-Peter Felsl's contributions to the field of power electronics through his patents and collaborations highlight his importance as an inventor. His work continues to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…